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Division of Electronic and Information Engineering, Tokyo University of Agriculture and Technology | 論文
- Electroluminescence from Deuterium Terminated Porous Silicon
- E_1 and E_1+Δ_1 Photoellipsometry Spectra of n-GaAs Modeled by the Franz-Keldysh Theory
- Fabrication of Periodic Si Nanostructure by Controlled Anodization
- Photoellipsometric Determination of Built-In Electric Field in δ-Doped GaAs
- Photoellipsometry Characterization of In_Ga_P/n^+-GaAs Heterostructures
- Determination of Built-In Electric Field Strength in InP/n^+-InP Structures Using Photoellipsometry