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Division Of Fundamental Mechanics Research Institute For Applied Mechanics Kyushu University | 論文
- Growth of MnGeP_2 Thin Films by Molecular Beam Epitaxy
- Growth of GaN Directly on Si(111) Substrate by Controlling Atomic Configuration of Si Surface by Metalorganic Vapor Phase Epitaxy
- Investigation of Hydrogen Chemisorption on GaAs(111)A Ga Surface by In Situ Monitoring and Ab Initio Calculation
- Growth of GaN Directly on Si(111) Substrate by Controlling Atomic Configuration of Si Surface by Metalorganic Vapor Phase Epitaxy