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Dept.of Information And Communications | 論文

• InGaP/InGaAs p-HEMTs Having Channel Layers Over the Critical Layer Thickness Grown on Patterned GaAs Substrates
• A Depletion-Mode In_Ga_As MOSFET with a Liquid Phase Oxidized Gate
• Reduced Dark Current Characteristics of a Norman-Incident In_Ga_As/GaAs QWIP Employing a p-i-n-i-p Camel Diode Structure
• Investigation of Highly Strained InGaP/InGaAs p-HEMT Grown by Using A Reduced Area Growth
• Investigation of Highly Strained InGaP/InGaAs p-HEMT Grown by Using A Reduced Area Growth
• Low-frequency noise characteristics of In_Al_As/In_Ga_As metamorphic high electron mobility transistors

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