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Dept.of Electronic Device Eng.,Grad.School of Information Science and Electrical Eng.,Kyushu Univ. | 論文
- Fabrication and Characteristics Evaluation of CoSi_2-Gate MOS Electron Tunneling Emission Cathode
- Resistance Increase in CoSi_2 Layer by Irradiation Induced Damage
- Thin CoSi_2 Formation on SiO_2 with Low-Energy Ion Irradiation
- Characterization of CoSi_2 Gate MOS Structure Formed by Ion Irradiation
- Filling Subquarter-Micron Trench Structure with High-Purity Copper Using Plasma Reactor with H Atom Source
- Study of ICP Production Mechanism by an Alternative Magnetic Field Measurement