スポンサーリンク
Departments of Immunology, Kurume University School of Medicine | 論文
- PE-333 Change of Left Atrial Volume by Exercise : One of Predictive Values of Cardiac Events in Patients with Coronary Artery Disease(Echo/Doppler-12, The 71st Annual Scientific Meeting of the Japanese Circulation Society)
- Epitaxial Growth of GaSe Films by Molecular Beam Epitaxy on GaAs(111), (001) and (112) Substrates
- Photoinduced Oxidation of Epitaxial Ga_2Se_3 Grown by Molecular Beam Epitaxy
- Defect Evaluation of Heavily P-Doped Si Epitaxial Films Grown at Low Temperature
- PJ-464 Strategy and Risk Stratification using Coronary Computed Tomography Angiography in Patients with Non-ST-Segment Elevation Myocardial Infarction(CT/DSA(09)(I),Poster Session(Japanese),The 72nd Annual Scientific Meeting of the Japanese Circulation So
- High prevalence of hepatitis C virus antibody and RNA in patients with head and neck squamous cell carcinoma
- PJ-508 Valsartan Suppresses Left Atrial Dilatation after Acute Myocardial Infarction : Comparison with Angiotensin Converting Enzyme Inhibitor(Heart failure, clinical(17)(M),Poster Session(Japanese),The 72nd Annual Scientific Meeting of the Japanese Circu
- Control of the Arrangement of the Native Gallium Vacancies in Ga_2Se_3 on (100)GaAs by Molecular Beam Epitaxy
- Formation of ZnGa_2Se_4 Epitaxial Layer during Molecular Beam Epitaxial Growth of Ga_2Se_3 on ZnSe
- Raman Study of Epitaxial Ga_2 Se_3 Films Grown by Molecular Beam Epitaxy
- Optical Anisotropy of Vacancy-Ordered Ga_2Se_3 Grown by Molecular Beam Epitaxy
- Metalorganic Chemical Vapor Deposition of ZnO Using D_2O as Oxidant
- Optimization of ZnO Films for Amorphous Silicon Solar Cells
- Large-Area ZnO Thin Films for Solar Cells Prepared by Photo-Induced Metalorganic Chemical Vapor Deposition
- Mobility Enhancement of Textured ZnO Films by Ultraviolet Light Irradiation
- Low-Temperature Si Epitaxy by Photochemical Vapor Deposition with SiH_2Cl_2
- p-Type a-SiC:H Films Using Triethylboron and Its Application to Solar Cells
- Effects of Deuterium on Low-Temperature Si Epitaxy by Photo-Chemical Vapor Deposition
- Heavily P-Doped (>10^ cm) Silicon Films Grown by Photochemical Vapor Deposition at a Very Low Temperature of 250℃
- Photochemical Vapor Deposition of Si/Si_Ge_x Strained Layer Superlattices at 250℃ : Silicon Heterostructures(Solid State Devices and Materials 1)