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Department of Physics and Quantum-Functional Semiconductor Research Center, Dongguk University | 論文
- Formation of p-Type Hg_Cd_Te Epilayers Grown on CdTe Buffer Layers on GaAs (211) B due to In Situ Thermal Annealing
- Epitaxial Growth of GaN on LaAlO_3(100) Substrate by RF Plasma Assisted Molecular Beam Epitaxy
- Dependence of the Surface, the Structural, and the Optical Properties on the Thickness of the AIN Buffer Layer for GaN Epilayers Grown on Sapphire Substrates : Semiconductors
- Effects of Sulfur Treatment and Hydrogen Plasma Treatment on GaAs
- Effects of Thermal Annealing on the Au/Ni and the Au/Ni/Si/Ni Contact Properties of p-type GaN Epilayers
- Effects of Hydrogenation and Annealing on the Deep Levels in GaN Epilayers Grown on Sapphire Substrates
- Totally complex submanifolds with simple geodesics immersed in a quaternionic projective space
- CR-submanifolds with cubic geodesic immersion in a complex space form