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Department of Physics, National Changhua University of Education | 論文
- Simulation of InGaN Quantum Well Laser Performance Using Quaternary InAlGaN Alloy as Electronic Blocking Layer
- Band-Gap Bowing Parameter of the Al_xGa_N Derived from Theoretical Simulation(Semiconductors)
- Magnetization Reversal in Patterned Permalloy Single Domain Elements
- Magnetic Domain Pinning in Lithographically Patterned Amorphous Magnetic Layer
- Substitution Effect on Magnetization Behaviors in Manganese Perovskites La_Y_xPb_MnO_3 (0.0*x*0.2)
- Numerical Study on Lateral Mode Behavior of 660-nm InGaP/AlGaInP Multiple-Quantum-Well Laser Diodes
- Simulation of Ho:CaF_2 Q-switched Tm:Y_3Al_5O_ Laser
- Numerical Study on Passive Q-Switching of Tunable Cr:LiCAF Laser with Cr:YSO Solid State Saturable Absorber : Optics and Quantum Electronics
- Verification of Interstitial Oxygen in Gd: PbWO_4 : Electrical Properties of Condense Matter
- Chaotic Behaviors of Bistable Laser Diodes and Its Application in Synchronization of Optical Communication : Optics and Quantum Electronics
- Evolution of Magnetotransport Properties and Spin-Glass Behavior of the La_Nd_xPb_MnO_3 System : Magnetism
- New Technique for Fabrication of Individual Carbon-Nanotube Field Emitters
- Initial Magnetization Curve and Magnetic Domain Pattern of Co/Pt Multilayered Thin Film
- Cr:YSO Saturable Absorber for the Three-Level Cr:BeAl_2O_4 Laser at 680.4nm
- Tunable Cr:YSO Q-Switched Cr:BeAl_2O_4 Laser:Numerical Study on Laser Performance along Three Principal Axes of the Q Switch