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Department of Physics, Meiji University | 論文
- Observation of Band Alignment Transition from Type-I to Type-II in AlInAs/AlGaAs Self-assembled Quantum Dots
- Fabrication of Periodically Domain-Inverted AlGaAs Quasi-Phase-Matched Devices by GaAs/Ge/GaAs Sublattice Reversal Epitaxy
- Sublattice Reversal in GaAs/Si/GaAs (100) Heterostructures by Molecular Beam Epitaxy
- Broad-Band Second-Harmonic Generation in LiNbO_3 Waveguide Using Optimized Domain-Inverted Grating
- Computer-Aided Design of Waveguide Gratings Having Asymmetric Reflectivity Spectra
- Design of Waveguide Grating Based on Simulated Annealing and Narrow-Band Modulation
- Effect of Lattice Mismatch on the Solidus Compositions of Ga_xIn_P Liquid Phase Epitaxial Crystals
- Orientation Dependence of LPE Growth Behavior of Ga_xIn_P on (100) and (111)B GaAs Substrates
- Growth Mechanism in the Metalorganic Vapor Phase Epitaxy of Metastable GaP_N_x Alloys: A Growth Interruption Study
- Metalorganic Vapor Phase Epitaxy Growth of High Quality Cubic GaN on GaAs (100) Substrates
- High Quality Cubic GaN Growth on GaAs (100) Substrates by Metalorganic Vapor Phase Epitaxy
- Crystal Structure of GaN Grown on 3C-SiC Substrates by Metalorganic Vapor Phase Epitaxy
- Second-Harmonic Generation from GaP/AlP Multilayers on GaP(111)Substrates Based on Quasi-Phase Matching for the Fundamental Standing Wave
- New Semiconductor Second-Harmonic Generator Based on Quasi-Phase-Matching for Cavity-Enhanced Fundamental Standing Wave
- Fast Lateral Transport of Excitons in a GaAs/AlGaAs Quantum Well
- High-Temperature Metalorganic Vapor Phase Epitaxial Growth of GaAs/AlGaAs Quantum Structures in Tetrahedral-Shaped Recesses on GaAs (111) B Substrates
- Polarization Characteristics of Crescent-Shaped Tensile-Strained GaAsP/AlGaAs Quantum Wire-Like Lasers
- GaAs/AlGaAs Quantum Structures Grown in Tetrahedral-Shaped Recesses on GaAs (111)B Substrates by Metalorganic Vapor Phase Epitaxy
- Polarization Characteristics of Crescent-Shaped Tensile-Strained GaAsP/AlGaAs Quantum Wire Lasers
- GaAs/AlGaAs Quantum Structures Grown in Tetrahedral-Shaped Recesses on GaAs (111)B Substrates by MOVPE