スポンサーリンク
Department of Physical Electronics, Tokyo Institute of Technology, Tokyo 152-8552, Japan | 論文
- Cantilever Resonance Detected by Tunneling Current under Application of RF Signal
- Bias Stress Induced Threshold Voltage Shift in Pentacene Thin-Film Transistors
- High-Performance In0.52Al0.48As/In0.6Ga0.4As Power Metamorphic High Electron Mobility Transistor for Ka-Band Applications
- Au Nanoparticles Chemisorbed by Dithiol Molecules Inserted in Alkanethiol Self-Assembled Monolayers Characterized by Scanning Tunneling Microscopy
- Simultaneous Measurements of Drain-to-Source Current and Carrier Injection Properties of Top-Contact Pentacene Thin-Film Transistors