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Department of Materials Science and Engineering, National Defense Academy | 論文
- P3-34 Nonradiative Recombination Process in Semi-insulating 6H-SiC Bulk Single Crystals Evaluated by Photoacoustic Spectroscopy(Poster session 3)
- P3-33 Thermal Diffusivity of Semi-Insulating 6H-SiC Single Crystal Wafers Evaluated by Photopyroelectric (PPE) Method(Poster session 3)
- Synthesis and Photoacoustic Spectra of Sm_6Ga_S_
- Studies of Defect Detection and Thermal Influence in Semi-Insulating 6H-SiC Substrates Using a Long-Wavelength Infrared Thermal Imaging Camera
- Studies of Localized Levels in HgCdTe Grown on Si and CdZnTe Substrates Using Metal-Organic Chemical Vapor Deposition
- Deep Levels in Hg_Cd_Te Grown by Metal-Organic Chemical Vapor Deposition
- Studies of Deep Levels in HgCdTe Grown on CdZnTe and Si Substrates
- Study of Deep Levels in Mesa-Type HgCdTe Device
- Thermoelectric Properties of Amorphous Zinc Oxide Thin Films Fabricated by Pulsed Laser Deposition
- Photoacoustic Spectra of Heavily Co-Doped ZnO Powders
- Nonradiative Transition Processes Observed from Photoacoustic Spectra of ZnO Thin Films Fabricated by Pulsed Laser Deposition
- Substrate Dependence of Photoacoustic Spectra on 3, 4, 9, 10-Perylenetetracarboxylic Dianhydride (PTCDA) Films(Evaluation Methods and Characterization of Organic Materials)(Recent Progress in Organic Molecular Electronics)
- Photoacoustic Spectra from Co Doped ZnO with Different Grain or Cluster Sizes
- Estimation of Schottky Contacts to Porous Si by Photoacoustic Spectroscopy
- Effect of Anisotropy of Surface Energy on the Growth Direction of Solid Phase in Constrained Growth Condition
- Submicron-Size Fabrication of Bi_2Sr_2CaCu_2O_x Thin Films by Utilizing Facet Growth
- Anisotropic Transport Properties in Twin-Free Bi_2Sr_2CaCu_2O_x Thin Films on Tilted LaAlO_3 (001) Substrates
- Structural Properties of Heavily B-Doped SiGe Thin Films for High Thermoelectric Power
- Distributions of Interface States and Bulk Traps in ZnO Varistors
- Structural Analysis of Hydrogenated a-Si Films by Reverse Monte Carlo Simulation