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Department of Materials Engineering, Korea University of Technology and Education | 論文
- Interaction of bis-diethylaminosilane with a hydroxylized Si(001) surface for SiO2 thin-film growth using density functional theory (Electron devices)
- A Study on Therlnal Stability of CoSi_2 Elnploying Novel Flne-Gralned PolycryStalline Silicon/CoSi_2/Si (001) System : Semiconductors
- A Pd-Cu-Ni Ternary Alloyed Membrane on Porous Nickel Support Prepared by Sputtering and Copper Reflow
- Interaction of bis-diethylaminosilane with a hydroxylized Si (001) surface for SiO_2 thin-film growth using density functional theory(Session 7A : Gate Oxides)
- Interaction of bis-diethylaminosilane with a hydroxylized Si (001) surface for SiO_2 thin-film growth using density functional theory(Session 7A : Gate Oxides)
- Study of Bump Formation in Integrated Chemical Vapor Deposition-Physical Vapor Deposition Aluminum Filling Process
- Highly Acidic C-Terminal Domain of pp32 Is Required for the Interaction with Histone Chaperone, TAF-Ibeta(Molecular and Cell Biology)
- The Synthesis of Crystalline Gallium Nitride Using Solid-State Metathesis Reactions at High Pressures