スポンサーリンク
Department of Information Processing, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8502, Japan | 論文
- Improvement of Crystalline Quality of BeZnSe Using Buffer Layer by Migration Enhanced Epitaxy on GaP(001) Substrate
- Effect of Buffer Layer on Epitaxial Growth of High-Magnesium-Content BeMgZnSe Lattice Matched to GaP(001) Substrate