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Department of Electronics, Tokyo Institute of Technology | 論文
- Roberge-Weiss相転移と拡張されたZ_3対称性(熱場の量子論とその応用,研究会報告)
- Photoelectronic Properties of CdSe Evaporated Films
- Properties of Photoconductive CdS Evaporated Films
- Photovoltaic Properties of CdS-p・Si Heterojunction Cells
- Planar-Type Gunn Diode of InP
- Frequency-Translated Holography for the Observation of Surface Acoustic Waves
- Electrical Properties of Semiconductor Photodiodes with Semitransparent Films
- Photovoltaic Properties of Cuprous Selenide-Semiconductor Junctions : III-2: II-VI COMPOUND SOLAR CELLS AND OTHERS
- C and P violations in the PNJL model (熱場の量子論とその応用)
- Study on an Angular Momentum Conservation of Radiation in a Uniaxial Crystal
- Preparation and Properties of Vacuum-deposited Germanium Thin Films
- Efficient Cell-seeding into Scaffolds Improves Bone Formation
- Photoelectric Effects of Thin-Films Formed with Chlorophyll-a and/or Chlorophyll-b at Liquid/Liquid Interfaces
- ZnTe-InAs Heterojunctions Prepared by Liquid-Phase Epitaxy
- Memory Effects in ZnTe-InAs Heterojunctions
- TIME OF FLIGHT MASS SPECTROMETER WITH ION ATTACHMENT METHOD
- Preparation of Ge-GaAs Heterojunctions by Vacuum Evaporation
- KINETIC ENERGY MEASUREMENT OF FRAGMENT IONS BY ELECTRON IMPACT WITH TIME-OF-FLIGHT MASS SPECTROMETER
- Evaporated Films of Cadmium Selenide