スポンサーリンク
Department of Electronics, Nagoya University, Nagoya 464-8603, Japan | 論文
- Reduction of Efficiency Droop in Semipolar $(1\bar{1}01)$ InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates
- Development of a Compact Divertor Simulator Excited by Helicon-Wave Discharge
- Spatial Distribution of H Atom Density in High-Density, Helicon-Wave H2 Plasmas Measured by Laser-Induced Fluorescence
- Composition of Positive Ions in High-Density H2 Plasmas Measured by Time-of-Flight Mass Spectrometry
- Emission Wavelength Dependence of Internal Quantum Efficiency in InGaN Nanowires
- Emission Wavelength Dependence of Internal Quantum Efficiency in InGaN Nanowires (Special Issue : Recent Advances in Nitride Semiconductors)
- Formation of Positive and Negative Carbon Cluster Ions in the Initial Phase of Laser Ablation in Vacuum