スポンサーリンク
Department of Electronic Engineering, Faculty of Engineering, Yamanashi University | 論文
- Raman Spectral Behavior of In_Ga_xP (0
- Strain-Induced Shift of Optical Phonon Frequency in InGaP Layers Grown on GaAs Substrates
- Strain-Energy-Stabilized Growth of InGaAsP Layers on GaAs (111)A Substrates in Immiscible Region
- Narrow Photoluminescence Spectra in InGaAsP/GaAs (001) LPE Layers Grown in the Immiscible Region
- Photoluminescence of InGaP/GaAs (111) LPE Layers with Elastic Strain due to Lattice Mismatch
- Raman Study of Misfit Strain and Its Relaxation in ZnSe Layers Grown on GaAs Substrates
- Influence of Phosphorus Evaporation from Melt on InGaP/GaAs LPE Growth
- LPE Growth of In_Ga_xAs_P_y with Narrow Photoluminescence Spectrum on GaAs (111)B Substrates
- Photoluminescence Processes of Zn-Doped In_Ga_xP with 0.6
- Electrical Properties of Zn-Doped In_Ga_xP
- Luminescence of Zn Diffused In_ ,Ga_xP in the Direct Transition Region
- Near-Bandgap Photoluminescence in Te-Doped In_Ga_xP (0.2≲x≲0.5)
- Effects of Reabsorption and Xenon on the Lifetime of the Excited Cesium Atom : Atoms and Molecules
- Optical Investigation of Critical Thickness and Interface Fluctuation in CdSe/ZnSe Strained Layer Superlattices Grown on InP
- Quality Variation of ZnSe Heteroepitaxial Layers Correlated with Nonuniformity in the GaAs Substrate Wafer : Semiconductors and Semiconductor Devices
- Variation of Misfit Strain in ZnSe Heteroepitaxial Layers with Temperature, Layer thickness and Growth Temperature : Semiconductors and Semiconductor Devices
- Electrical and Luminescent Properties of In-Doped ZnSe Grown by Low-Pressure Vapor-Phase Epitaxy
- Estimation of Grown Layer Thickness by Cathodoluminescence Measurement
- Temperature Dependence of Carrier Concentration, Resistivity, and Hall Mobility in Te-Doped In_Ga_xP
- Hall Mobility of Te-Doped In_Ga_xP at 300 K