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Department of Electrical and Computer Engineering, National University of Singapore, 117576 Singapore | 論文
- Determination of Al Composition and DLTS Measurements of Al_xGa_Sb on GaSb Substrate
- Source/Drain Engineering for In0.7Ga0.3As N-Channel Metal--Oxide--Semiconductor Field-Effect Transistors: Raised Source/Drain with In situ Doping for Series Resistance Reduction
- Ge/Ni-InGaAs Solid-State Reaction for Contact Resistance Reduction on n In.Ga.As (Special Issue : Solid State Devices and Materials (1))