スポンサーリンク
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso, Showa-ku, Nagoya 466-8555, Japan | 論文
- Characterization of Si wafer Surfaces after Wet Chemical Treatment by the Microwave Reflectance Photconductivity Decay Method with Surface Electric Field
- Sb Pile-up at Oxide/Si Interface during Drive-in Diffusion after Predeposition Using Doped Oxide Source
- Applicability of Phosphorus and Boron Diffusion Parameters Extracted from Predeposition to Drive-in Diffusion for Bulk Silicon and Silicon-on-Insulator