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Department of Electrical Science, Korea Advanced Institute of Science and Technology | 論文
- Tapered Sidewall Schottky Diodes with Very Low Taper Angles : A-4: LSI-3 AND JUNCTION DEVICES
- Latch-up Suppressed Insulated Gate Bipolar Transistor by the Deep p^+ Ion Implantation under the n^+ Source
- Low-Loss Schottky Rectifier Utilizing Trench Sidewall as Junction-Barrier-Controlled Schottky Contact
- A Trench-Gate Silicon-on-Insulator Lateral Insulated Gate Bipolar Transistor with the p^+ Cathode Well
- Observation of Resonance by Individual Energy Lavels in InGaAs/AlAs Triple-Barrier Resonant Tunneling Diodes