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Department of Electrical Engineering. University of South Carolina | 論文
- Differential Carrier Lifetime in AlGaN Based Multiple Quantum Well Deep UV Light Emitting Diodes at 325 nm : Semiconductors
- AlGaN/InGaN/GaN Double Heterostructure Field-Effect Transistor : Semiconductors
- Room-Temperature Stimulated Emission from AlN at 214nm
- Low Threshold-14W/mm ZrO_2/AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors
- 10Milliwatt Pulse Operation of 265nm AlGaN Light Emitting Diodes
- Planar Schottky Diodes on High Quality A-plane GaN
- Ultraviolet Light Emitting Diodes Using Non-Polar a-Plane GaN-ALGaN Multiple Quantum Wells
- A New Selective Area Lateral Epitaxy Approach for Depositing a-Plane GaN over r-Plane Sapphire
- Lateral Epitaxial Overgrowth of Fully Coalesced A-Plane GaN on R-Plane Sapphire
- Lateral Current Crowding in Deep UV Light Emitting Diodes over Sapphire Substrates
- Pulsed Metalorganic Chemical Vapor Deposition of Quaternary AlInGaN Layers and Multiple Quantum Wells for Ultraviolet Light Emission
- 324 nm Light Emitting Diodes With MilliWatt Powers : Semiconductors
- Submilliwatt Operation of AllnGaN Based Multifinger-Design 315 nm Light Emitting Diode (LED) over Sapphire Substrate : Semiconductors
- Stripe Geometry Ultraviolet Light Emitting Diodes at 305 Nanometers Using Quaternary AlInGaN Multiple Quantum Wells : Semiconductors
- Quaternary AlInGaN Multiple Quantum Wells for Ultraviolet Light Emitting Diodes : Semiconductors
- Matrix Addressable Micro-Pixel 280nm Deep UV Light-Emitting Diodes
- Optically Pumped Lasing at 353nm Using Non-polar a-plane AlGaN Multiple Quantum Wells over r-plane Sapphire
- Micro-pixel Design Milliwatt Power 254nm Emission Light Emitting Diodes
- Sub-Milliwatt Power III-N Light Emitting Diodes at 285 nm
- Continuous Wave Milliwatt Power AlGaN Light Emitting Diodes at 280nm