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Department of Electrical Engineering and Computer Science, Massachusetts Institute of technology | 論文
- Simultaneous achievement of high performance and high reliability in a 38/77GHz InGaAs/AlGaAs PHEMT MMIC
- Temperature Influence on the Generalized Einstein Relation for Degenerate Semiconductors with Arbitrary Band Structures
- Effect of Interfacial Oxide on Static and High-Frequency Performance in Poly-Emitter Bipolar Transistors Under High-Level Injection
- Effect of Ge Concentration on Static and Microwave Performances in Ge_xSi_ Heterojunction Bipolar Transistors under High-Level Injection
- A 12-b 600 ks/s Digitally Self-Calibrated Pipelined Algorithmic ADC (Special Section on the 1993 VLSI Circuits Symposium (Joint Issue with the IEEE Journal of Solid-State Circuits, Vol.29, No.4 April 1994))
- Evaluation of Coupling Coefficients for Laterally-Coupled Distributed Feedback Lasers
- Comparative Breakdown Study of Mesa- and Ion-Implantation-Isolated AlGaN/GaN High-Electron-Mobility Transistors on Si Substrate
- Degradation Mechanism of AlGaAs/InGaAs Power Pseudomorphic High-Electron-Mobility Transistors under Large-Signal Operation