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Department of Electrical Engineering, National Chen Kung University | 論文
- Growth of Be-doped p-type GaN under Invariant Polarity Conditions
- Crystal Polarity Effects on Magnesium Implantation into GaN Layer
- Effects of Phosphorus Implantation on the Activation of Magnesium Doped in GaN
- Growth of Be-doped p-type GaN under Invariant Polarity Conditions