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Department of Electrical Engineering, Faculty of Engineering, Osaka University | 論文
- Effects of Hg Annealing on Photoluminescence Spectra of CdTe Crystals and MOCVD-Grown CdTe/GaAs Films
- Auditory P50 obtained with a repetitive stimulus paradigm shows suppression to high-intensity tones
- Synthesis of Low-Resistivity Aluminum Nitride Films Using Pulsed Laser Deposition
- Effect of Surface Phosphidization on GaAs Schottky Barrier Junctions
- Current Saturation Associated with Ultrasonic Amplification in CdS Crystals
- Ion Temperature of Laser-Produced Plasma
- Properties of Plasma Produced by High Power Laser
- Generation and Amplification of Laser Pulse with a Variable Pulsewidth Using PTM Method
- A study of verbal and spatial information processing using event-related potentials and positron emission tomography
- Optimization of Single Crystal Preparation of Bi_2Sr_2CaCu_2O_x Superconductor by the Travelling Solvent Floating Zone Method
- Growth of KLN Fiber Crystals and Its Application for Blue-Violet Light Generation
- Microwave Scattering by Turbulent Plasma in a Magnetic Field
- Internal Electron Emission in Phosphorus-Doped Polycrystalline Diamond Field Emitters
- Characterization and Field Emission of Sulfur-Doped Boron Nitride Synthesized by Plasma-Assisted Chemical Vapor Deposition
- InSb Carrier Lifetime in High Electric Field
- Characterization of In_xGa_As_P_y Epitaxial Layers and Relation to Lattice Matching : B-5: COMPOUND SEMICONDUCTOR DEVICE TECHNOLOGY
- Non-Maxwellian Electron Distribution Function in n-GaAs Determined from Electric Field-Dependent Photoluminescence Spectrum
- Electrical and Optical Characteristic of Liquid Phase Epitaxial In_xGa_As
- Valley Transfer of Hot Electrons in GaAs and Related Mixed Crystals (Selected Topics in Semiconductor Physics) -- (Transport)
- Liquid Epitaxial Growth and Characterization of Cr-Doped In_xGa_As