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Department of Electrical Engineering, Faculty of Engineering, Keio University | 論文
- Investigations on the Formation of SiO_2 in Si^+-Implanted Al_2O_3
- Photoelectric Properties of n-ZnSe/p-Si or p^+-GaAs Heterojunctions : III-2: II-VI COMPOUND SOLAR CELLS AND OTHERS
- The Distribution of the Excess Vacancies in the Bulk at the Diffusion of Phosphorus into Silicon
- Phosphorus Diffusion in Silicon Free from the Surface Effect under Extrinie Conditions
- The Confirmation of the Surface Effect upon Phosphorus Diffusion into Silicon
- Determination of Diffusion Coefficient of Phosphorus in Silicon by Boltzmann-Matano's Method
- Electrical Properties of CdCr_2Se_4. : I. p-Type Ag-Doped Single Crystals
- Extrinsic Photocarrier Generation at Fluorenone Bisazo Pigment/α-Phenylstilbene Derivative Interface
- Anitimony Diffusion into Sillicon by the Doped Oxide Method
- Phosphorus Diffusion into Silicon under the Condition of Controlled Surface Concentration
- Electrical Conductivity of p-Type CdCr_2Se_4 Single Crystals
- Electrical Properties of CdCr_2Se_4. : II. n-Type In-Doped Single Crystals
- Electrical Properties of Amorphous Semiconductor Ge_xS_
- The Effect of Thermal Oxidation of Silicon on Boron Diffusion in Extrinsic Conditions
- Concentration Dependence of the Diffusion Coefficient of Boron in Silicon
- Evaluation of the Scattering Factor in Amorphous Ge_xTe_
- Thermoelectromotive Force of a Crystalline-Amorphous-Crystalline Thin Film Structure of GeTe
- Photocarrier Generation in a Layered Organic Photoreceptor Containing Azo Pigment
- Internal Loss and Gain Factor of InGaAsP/GaAs Laser
- Dynamic Quenching of Photocapacitance in CdS: Cu Evaporated Thin Films