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Department of Applied Physics, Faculty of Engineering, University of Tokyo | 論文
- Ultrasonic Propagation Velocity in Magneto Rheological Fluid under a Uniform Magnetic Fields(Asia-Pacific Symposium on Applied Electromagnetics and Mechanics (APSAEM08))
- Effect of Oxygen Nonstoichiometry on the Transport Properties of Ba_2YCu_3O_ : I. Oxides
- Study on the Si(111) √×√ - Ag Surface Structure by X-Ray Diffraction : Surfaces, Interfaces and Films
- Interference of Nuclear Bragg Scattered X-Rays in X-Ray Interferometer with Large Optical Path Difference
- Time Domain Interferometry in X-Ray Region Using Nuclear Resonant Scattering
- Time-Delayed Interferometry with Nuclear Resonant Scattering of Synchrotron Radiation
- Flux Growth and Characterization of α-^Fe_2O_3 Single Crystals for Nuclear Bragg Scattering Optical Components
- Focusing Properties of a Linear-Phase Bragg-Fresnel Lens
- A Plane Wave Diffraction on an Amplitude-Phase Laue Microinterferometer
- High-Resolution Measurements of Nuclear Bragg Scattering from a Synthetic α-^Fe_2O_3 Crystal
- An X-Ray Phase Plate Using Bragg-Case Diffraction
- Electrical Resistance of Iron Films Deposited at Liquid Nitrogen Temperature
- Electrostatic Interaction Energy and Solvent Accessibility in the Methotrexate-Reduced Nicotinamide Adenine Dinucleotide Phosphate-Dihydrofolate Reductase Ternary Complex(Medicinal Chemistry,Chemical)
- ELECTROSTATIC FORCES IN THE INHIBITION OF DIHYDROFOLATE REDUCTASE BY METHOTREXATE. A FIELD POTENTIAL STUDY
- Effect of Lattice Mismatch on the Solidus Compositions of Ga_xIn_P Liquid Phase Epitaxial Crystals
- Orientation Dependence of LPE Growth Behavior of Ga_xIn_P on (100) and (111)B GaAs Substrates
- Mossbauer Time Spectra of the Nuclear Forward Scattering from Coherently Vibrating Resonant Nuclei
- Switching of Photon Helicities in the Hard X-Ray Region with a Perfect Crystal Phase Retarder
- Time-Resolved X-Ray Diffraction from a Silicon Crystal Irradiated by a Q-Switched Nd:YAG Laser : Condensed Matter
- X-Ray Standing Wave Method Applied to the Characterization of InGaAsP Alloy Semiconductor Thin Film