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Department Of Physical Electronics Tokyo Institute Of Technology | 論文
- Two-Dimensionally Position-Controlled Excimer-Laser-Crystallization of Silicon Thin Films on Glassy Substrate
- A Proposed Organic-Silica Film for Inter-Metal-Dielectric Application
- Preparation of Position-Controlled Crystal-Silicon Island Arrays by Means of Excimer-Laser Annealing
- A Novel Phase-Modulated Excimer-Laser Crystallization Method of Silicon Thin Films
- Preparation of Organic Silica Films with Low Dielectric Constant from the Liquid Phase
- Excimer-Laser-Induced Lateral-Growth of Silicon Thin-Films
- Excimer-Laser-Produced Single-Crystal Silicon Thin-Film Transistors
- Simulation of Rotating Magnetic Field Current Drive Using Multilayer Model
- Measurement of Electron Density and Temperature of Plasma with RF Current Drive by Alfven Wave
- Two Adults Requiring Implantable Defibrillators Because of Ventricular Tachycardia and Left Ventricular Dysfunction Caused by Presumed Kawasaki Disease
- Minimum-Energy State of an Axisymmetric Toroidal Plasma
- Xe-based gas jet type Z-pinch DPP EUV source for lithography
- Microstructure and Mechanical Properties of P/M Al-V-Fe and Al-Fe-M-Ti (M = V, Cr, Mn) Alloys Containing Dispersed Quasicrystalline Particles
- New Amorphous Alloys in Al-Ti Binary System
- High Strength Al-Ti-Fe Alloys Consisting of Amorphous and fcc-Al Phases Prepared by Rapid Solidification
- High Mechanical Strength of Al-(V, Cr, Mn)-(Fe, Co, Ni)Quasicrystalline Alloys Prepared by Rapid Solidification
- Characterization of Chemical-Vapor-Deposited Amorphous-Silicon Films
- Low-Temperature Chemical Vapor Deposition of Silicon Nitride Using A New Source Gas : Hydrogen Azide
- Hot-Wall Chemical-Vapor-Deposition of Amorphous-Silicon and Its Application to Thin-Film Transistors
- Chemical Vapour Deposition of Amorphous Silicon with Silanes for Thin Film Transistors : The Influence of the Amorphous Silicon Deposition Temperature