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Department Of Materials Science Faculty Of Engineering Tohoku University | 論文
- Thermodynamic Calculation of Phase Diagram in the Bi-In-Sb Ternary System
- Solubility Product of TiN in Austenite
- The Control of the Morphology of MnS Inclusions in Steel during Solidification
- Microstructural changes in Nd_2Fe_B permanent magnet alloys during HDDR phenomena
- A Novel Non-Destructive Characterization Method of Electronic Properties of Pre- and Post-Processing Silicon Surfaces Based on Ultrahigh-Vacuum Contactless Capacitance-Voltage Measurements
- Non-Destructive Characterization of Electronic Properties of Pre- and Post-Processing Silicon Surfaces by UHV Contactless Capacitance-Voltage Method
- Solubility Products of VS and NbS in Iron Alloys
- PE-087 Plasma pteridine level as a biomarker of cardiovascular diseases(Endothelium(02)(IHD),Poster Session(English),The 72nd Annual Scientific Meeting of the Japanese Circulation Society)
- FRS-104 Plasma Biopterin Levels as a Biomarker of Endothelial Dysfunction(Biomarker of Cardiovascular Disease, The 71st Annual Scientific Meeting of the Japanese Circulation Society)
- Phase Equilibria and Thermodynamic Evaluation Approximating Short-range Ordering Energy in the Fe-Rh Binary System
- Effect of Thermal Treatment in Cd or Se Atmosphere on Electrical Properties of CdSe
- Phase Equilibria in FeS-XS and MnS-XS (X=Ti, Nb and V) Systems
- Effects of Liquid Bi Particles on Grain Growth of Fe-1.9vol%Bi Alloy
- A New Pb-free Machinable Ferritic Stainless Steel
- Thermodynamic Calculations of Phase Equilibria in the Fe-Cr-S System
- Solid/Liquid Equilibria in Fe-Cu Based Ternary Systems
- Large Magnetoresistance Effect in Polycrystalline Isotropic La-AM-Mn-O Ceramics(AM=Na, K, Rb, Cs)
- Magnetoresistance Effect in Isotropic RE_Sr_xMn_TM_yO_3(RE=La, Pr, Nd, Sm ; TM=3d transition metal)Ceramics
- Enhancement of the Photoluminescence from Porous Silicon by Anodic Polarization
- Characterization of Interface Electronic Properties of Low-Temperature Ultrathin Oxides and Oxynitrides Formed on Si(111) Surfaces by Contactless Capacitance-Voltage and Photoluminescence Methods
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