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Department Of Electronics Faculty Of Engineering Tokai University | 論文
- Synthesis of β-SiC Layer in Silicon by Carbon Ion 'Hot' Implantation
- Change in Electrical Resistance of Diamond Surface Conductive Layer due to Acid Mist
- A Possible Model for Changes in Photoluminescence Wavelength of Porous Si due to Photochemical Etching
- Effect of Photoetching on Thick Porous Silicon
- Threshold Voltage of Gold-Doped p-MOSFET
- The Generation of Hot Carriers in a Semiconductor Rod with a Notch
- Effect of a Voltage-Gating on Negative Resistance in a Planar p-i-n Diode with Guard Ring
- Multi-Current Peaks for a Voltage-Controlled Negative Resistance in Si p^+ -i-n^+ Diodes with a Hole Injecting Gate
- Negative Resistance in a Planar p^+ -i-n^+ Diode with Junction Gate
- Multi-Step Negative Resistance in Si p-i-n Diodes
- A Criterion for the Occurrence of Negative Resistance in Si P-π-n Diode
- Planar-Type Negative Resistance Diodes with Control MOS Gates
- Anteroposterior weight-bearing radiography of the knee with both knees in semiflexion, using new equipment
- Formation Mechanism of p-Type Surface Conductive Layer on Deposited Diamond Films
- Space Charge Limited Current in Semiconducting Diamomd Films
- Synthesis of Diamond Thin Films Having Semiconductive Properties : Surfaces, Interfaces and Films
- Nitric Oxide Mediates interleukin-1-Induced Gene Expression of Matrix Metalloproteinases and Basic Fibroblast Growth Factor in Cultured Rabbit Articular Chondrocytes^1
- Kinetic Rate Constant for Electron Transfer between Ferrous Ions and Novel Rusticyanin Isoform in Acidithiobacillus ferrooxidans
- Fabrication of Metal-Insulator-Semiconductor Devices Using Polycrystalline Diamond Film
- Brewsler and Pseudo-Brewster Angle Technique for Determination of Optical Constants