スポンサーリンク
Department Of Electronic Science And Engineering Kyoto University | 論文
- Population Density and LTE of Excited Atoms in a Positive-Column Plasma I. : Calculation on Hydroegn
- Enhancement of Absorption Magnitude of Short-Wavelength Intersubband Transition in InGaAs/AlAs Quantum Wells
- Nearinfrared Intersubband Transitions in InGaAs/AlAs Quantum Wells on GaAs Substrate
- Effect of Lime Particle Size on Melting Behavior of Lime-containing Flux
- Nucleation Control in the Growth of Bulk GaN by Sublimation Method
- Transmission Electron Microscopy of Sublimation-Grown GaN Single Crystal and GaN Homoepitaxial Film
- Photoluminescence and Photoluminescence Excitation Spectra of AlAs/GaAs Disordered Superlattices with Various Disordered Lengths
- Analysis of Waveguides and Waveguide Bends in Photonic Crystal Slabs with Triangular Lattice
- Design for Waveguides in Three-Dimensional Photonic Crystals
- Development of One Period of a Three-Dimensional Photonic Crystal in the 5-0μm Wavelength Region by Wafer Fusion and Laser Beam Diffraction Pattern Observation Techniques
- Fabrication and Optical Properties of One Period of a Three-Dimensional Photonic Crystal Operating in the 5-10 μm Wavelength Region
- Wafer Fusion Condition for GaAs/AlGaAs System and Its Application to Laser Diode : Instrumentation, Measurement, and Fabrication Technology
- Photonic Crystal Lasers
- Linearly-Polarized Single-Lobed Beam in a Surface-Emitting Photonic-Crystal Laser
- On-the-Fly Wavelength Conversion of Photons by Dynamic Control of Photonic Waveguides
- Correlation Between the Age of Pinealectomy and the Development of Scoliosis in Chickens
- Pulsed Laser Deposition of C_ Thin Films with Atomically Smooth Surface
- Determination of Minority-Carrier Lifetime in Multicrystalline Silicon Solar Cells using Current Transient Behaviors
- A Case of Anti-Epiligrin Cicatricial Pemphigoid Associated with Lung Carcinoma and Severe Laryngeal Stenosis : Review of Japanese Cases and Evaluation of Risk for Internal Malignancy
- Low-Voltage High-Gain 0.2 μm N-Channel Metal Oxide Semiconductor Field Effect Transistors by Channel Counter Doping with Arsenic