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Department Of Electrical Engineering National Tsing Hua University:department Of Electrical Engineer | 論文
- Effect of InGaP Barrier Thickness on the Performance of 1.3-μm InAsP/InP/InGaP Strain-Compensated Multiple-Quantum-Well Laser Diodes : Optics and Quantum Electoronics
- Enhanced Luminescence and Reduced Junction Temperature in n-Type Modulation-Doped AlGaInP Multiquantum-Well Light-Emitting Diodes
- Mobility and Charge Density Tuning in Double-Doped Enhancement-Mode Pseudomorphic High-Electron-Mobility Transistors Grown by Metalorganic Chemical Vapor Deposition