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Department Of Electrical Engineering Faculty Of Engineering Hokkaido University:(permanent Address)k | 論文
- Novel Wire Transistor Structure with In-Plane Gate Using Direct Schottky Contacts to 2DEG
- Schottky Contacts on n-InP with High Barrier Heights and Reduced Fermi-Level Pinning by a Novel In Situ Electrochemical Process
- Depletion Characteristics of Direct Schottky Contacts to Quantum Wells Formed by In Situ Selective Electrochemical Process
- Deep Electron Traps in Undoped GaAs Grown by MOCVD
- Novel Surface Passivation Scheme for Compound Semiconductor Using Silicon Interface Control Layer and Its Application to Near-Surface Quantum Welts
- Characterization of Deep Levels in Si-Doped In_xAl_As Layers Growrn by Molecular Beam Epitaxy