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Department Of Electrical Engineering And Graduate Institute Of Electro-optical Engineering National | 論文
- The Roughness-Enhanced Light Emission from Metal-Oxide-Silicon Light-Emitting Diodes Using Very High Vacuum Prebake : Semiconductors
- Room-Temperature Electroluminescence from Metal-Oxide-Silicon-Tunneling Diodes on (110) Substrates
- Laser-Induced Activation of p-Type GaN with the Second Harmonics of a Nd:YAG Laser