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Department Of Electrical And Electronic Engineering Faculty Of Engineering Osaka Industrial Universi | 論文

• Electrical Breakdown Strength of Al_2O_3 Si_3N_4 and SiAlON Insulating Films Prpared by rf-magnetron Sputtering
• CaS:Eu, F Thin Film Electroluminescent Devices Prepared by RF Sputtering with Hydrogen-Argon Mixture Gas
• CaS : EuF_3 Thin Film Electroluminescent Devices Prepared by RF-Magnetron Sputtering
• Mechanism of High Field Conduction in AC Thin Film Electroluminescent Devices

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