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Department Of Electrical And Computer Engineering Nagoya Institute Of Technology | 論文
- Band Gap Energy and Stress of GaAs Grown on Si by MOCVD
- Deep Levels in GaAs Grown Using Superlattice Intermediate Layers on Si Substrates by MOCVD
- MOCVD Growth of GaAs_P_x (x=0-1) and Fabrication of GaAs_P_ LED on Si Substrate
- MOCVD Growth of GaAs_P_ on Si Substrate
- AlGaAs/GaAs DH Lasers on Si Substrates Grown Using Super Lattice Buffer Layers by MOCVD
- Mechnism of MOCVD Growth for GaAs and AlAs
- Solid Composition and Growth Rate of Ga_Al_xAs Grown Epitaxially by MOCVD
- Ellipsometric Studies on Sputter-Damaged Layer in n-InP
- ^In-NQR Study of Heavy-Fermion Superconductors Ce_2MIn_8 (M = Co, Rh)(Condensed matter: electronic structure and electrical, magnetic, and optical properties)
- Strongly Localized Singular Bloch Modes Created in Dual-Periodic Microstrip Lines (Electromagnetism, Optics, acoustics, Heat Transfer, Classical Mechanics and Fluid Mechanics)
- Recent advance in the treatment of hilar cholangiocarcinoma : hepatectomy with vascular resection
- A Novel Method of Bulding a Compositional Non-Uniformity in an InGaN Layer Grown on Sapphire Substrate by Metalorganic Chemical Vapor Deposition
- The Electron Temperature in a Narrow-Discharge-Tube Noble-Gas Positive-Column Plasma
- Compositional Inhomogeneity of InGaN Grown on Sapphire and Bulk GaN Substrates by Metalorganie Chemical Vapor Deposition
- X-Ray Diffraction Analysis of GaN and GaN/InGaN/GaN Double-Hetero Structures Grown on Sapphire Substrate by Metalorganic Chemical Vapor Deposition
- Four States of Surface-Stabilized Ferroelectric Liquid Crystal with Parallel Rubbing
- Effect of Surface Pretilt Angle on Optical Properties of Surface-Stabilized Ferroelectric Liquid Crystals
- No-touch resection of hilar malignancies with right hepatectomy and routine portal reconstruction
- Treatment strategy for hilar cholangiocarcinoma, with special reference to the limits of ductal resection in right-sided hepatectomies
- Recurrence of mucosal carcinoma of the bile duct, with superficial flat spread, 12 years after operation
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