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Department Of Computational Nanoelectronics National Nano Device Laboratories | 論文
- Thin Oxides Grown on Disilane-Based Polysilicon(Semiconductors)
- Quantum Mechanical Corrected Simulation Program with Integrated Circuit Emphasis Model for Simulation of Ultrathin Oxide Metal-Oxide-Semiconductor Field Effect Transistor Gate Tunneling Current
- A Quantum Mechanical Corrected SPICE Model for Ultrathin Oxide MOSFETs' Gate Tunneling Current Simulation
- Electrostatic Discharge Protection under Pad Design for Copper-Low-K VLSI Circuits