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Department Of Chemistry Graduate School Of Science Osaka City University | 論文
- Fundamental Studies on Electrokinetic Chromatography with PEGylated Phospholipid Micelles
- EPR Study on Stable Magnesium Complexes of the Phenoxyl Radicals Derived from a Vitamin E Model and Its Deuterated Derivatives
- Effect of Thiazinotrienomycin B, an Ansamycin Antibiotic, on the Function of Epidermal Growth Factor Receptor in Human Stomach Tumor Cells
- No Association of Polymorphisms in the 5' Region of the CD14 Gene and Food Allergy in a Japanese Population
- Effects of Probiotics on the Immune System and Allergic Diseases
- A New Family of NAD(P)H-Dependent Oxidoreductases Distinct from Conventional Rossmann-Fold Proteins
- Synthesis and Biological Activity of Novel 2-(α-Alkoxyimino)benzylpyridine Derivatives as K^+ Channel Openers
- Synthesis and Biological Activity of Novel 1,3-Benzoxazine Derivatives as K^+ Channel Openers
- Photoinduced Electron-Transfer and Electron-Mediating Processes of Fullerenes and Phenothiazine Oligomers in a Polar Solvent
- Molecular cloning and characterization of Trypanosoma vivax alternative oxidase (AOX) gene, a target of the trypanocide ascofuranone
- A Novel Tetranuclear Iron (III) Complex Having L-Alanine Bridges and an Unprecedented (Fe_4 (O_2H) Core
- Analytical Expression Based Design of a Low-Voltage FD-SOI CMOS Low-Noise Amplifier(Analog Circuit Techniques and Related Topics)
- ^C-NMR Study on the Interaction of Medium-Chain Acyl-CoA Dehydrogenase with Acetoacetyl-CoA^1
- STUDY ON THE BOND SPLITTING STRENGTH OF SPLICE JOINTS OF LARGE-DIAMETER BARS D32 LAPPED ALL IN THE SAME SECTION
- High-Power InGaN-Based Violet Laser Diodes with a Fundamental Transverse Mode
- Violet InGaN/GaN/AlGaN-Based Laser Diodes Operable at 50℃ with a Fundamental Transverse Mode
- InGaN/GaN/AlGaN-Based Laser Diodes Grown on GaN Substrates with a Fundamental Transverse Mode
- Violet InGaN/GaN/AlGaN-Based Laser Diodes with an Output Power of 420 mW
- High-Power, Long-Lifetime InGaN/GaN/AlGaN-Based Laser Diodes Grown on Pure GaN Substrates
- InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices