スポンサーリンク
Department Materials Science and Metallurgy, University of Cambridge | 論文
- High-Quality Epitaxial MnSi(111) Layers Grown in the Presence of an Sb Flux
- Carrier Density Dependent Localization and Consequences for Efficiency Droop in InGaN/GaN Quantum Well Structures
- Evidence for Dark States in the Temperature Dependent Recombination Dynamics of InGaN/GaN Quantum Wells
- High-Speed Substrate-Emitting Micro-Light-Emitting Diodes for Applications Requiring High Radiance