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Cnr-imm Catania | 論文
- Electrical Properties of Ultrathin SiO_2 Layer Deposited at 50℃ by Inductively Coupled Plasma-Enahnced Chemical Vapor Deposition
- Non-Conventional Characterization of Electrically Active Dopant Profiles in Al-Implanted Ge by Depth-Resolved Micro-Raman Spectroscopy
- Non-Conventional Characterization of Electrically Active Dopant Profiles in Al-Implanted Ge by Depth-Resolved Micro-Raman Spectroscopy