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Central Research Lab. Hitachi Ltd., Higashi-koigakubo 1-280, Kokubunji, Tokyo 185, Japan | 論文
- Dependence of CdZnSe/ZnMgSSe Laser Diode Operating Characteristics on Band Gap and Net Acceptor Concentration of p-Type Cladding Layer
- Operating Current Dependence of CdZnSe/ZnMgSSe Laser Diodes on Band Gap and Carrier Concentration of P-Type Cladding Layer