スポンサーリンク
Center for Semiconductor Research and Development, Toshiba Corp., Semiconductor Co., 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan | 論文
- In situ Doped Embedded-SiGe Source/Drain Technique for 32 nm Node p-Channel Metal–Oxide–Semiconductor Field-Effect Transistor
- Threshold Voltage Control of Hf-based High-$\kappa$ Gate Stack System by Fluorine Incorporation into Channel and Its Impact on Short-Channel Characteristics