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Center For Integrated Circuit Failure Analysis And Reliability Department Of Electrical And Computer | 論文
- Latent Damage Generation in Thin Oxides of Metal-Oxide-Semiconductor Devices under High-Field Impulse Stress and Damage Characterization Using Low-Frequency Noise Measurement : Semiconductors
- Hot-Carrier Lifetime Dependence on Channel Width and Silicon Recess Depth in N-Channel Metal-Oxide-Semiconductor Field-Effect-Transistors with the Recessed Local Oxidation of Silicon Isolation Structure(Semiconductors)