スポンサーリンク
Advanced Technology Research Laboratories, Nippon Steel Corporation, 20-1 Shintomi, Futtsu, Chiba 293-8511, Japan | 論文
- Analysis of Basal Plane Bending and Basal Plane Dislocations in 4H-SiC Single Crystals
- Behavior of Basal Plane Dislocations in Hexagonal Silicon Carbide Single Crystals Grown by Physical Vapor Transport
- Nitrogen Incorporation Mechanism and Dependence of Site-Competition Epitaxy on the Total Gas Flow Rate for 6H-SiC Epitaxial Layers Grown by Chemical Vapor Deposition
- Characterization of Low-Dielectric-Constant Methylsiloxane Spin-on-Glass Films