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Advanced Technology Laboratory, LG Semicon Co., Ltd. | 論文
- Shallow Trench Isolation Characteristics with High-Density-Plasma Chemical Vapor Deposition Gap-Fill Oxide for Deep-Submicron CMOS Technologies
- Effects of the Partial Pressure of Copper(I)Hexafluoroacetylacetonate Trimethylvinylsilane on the Chemical Vapor Deposition of Copper
- Characterization of Corner-Induced Leakage Current of a Shallow Silicided n^+/p Junction for Quarter-Micron MOSFETs