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Advanced Semiconductor Devices Research Laboratories, Toshiba Corporation | 論文
- Smoothing of Si Trench Sidewall Surface by Chemical Dry Etching and Sacrificial Oxidation
- Evaluation of 0.3μm Poly-Silicon CMOS Circuits for Intelligent Power IC Application
- Evaluation of 0.3μm Poly-Silicon CMOS Circuits for Intelligent Power IC Application
- Model of Photoinduced Disaccommodation in Oxygen-deficient Yttrium Iron Garnet