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Advanced Science And Technology Center For Cooperative Research Kyushu University | 論文
- Development and Application of Millimeter-Wave Imaging Radar
- 30pA24P 超短パルス反射計を用いた定常プラズマの密度分布測定(プラズマ計測)
- 30aA05 LHDにおけるECEイメージング(プラズマ計測)
- 30aA02 [招待講演]ミリ波イメージングレーダーと計測応用(プラズマ計測)
- 30pA06P LHDにおけるECEイメージングI(プラズマ計測)
- 27pA11P 反射計によるICPプラズマの密度分布モニター(プラズマ基礎・応用)
- High Temperature PTC Thermistor Using Ba Cobaltite
- Influences of A-site Partial Substitution for BaCo_Fe_O_3 Oxide on Perovskite Structure and Oxygen Permeability
- ポータブル表面プラズモン共鳴免疫センサを用いたサブ ppb レベルの2-ヒドロキシビフェニルの検出
- ストロンチウム-コバルト系酸化物の酸素透過能と相移転.Bサイト置換効果
- Optimum Discharge Condition of DC Bias Electron Cyclotron Resonance Plasma Sputtering for High Quality Si Epitaxial Growth
- Measurement of Ultrashort-Pulse Cross-Polarization Scattering in a Tandem Mirror : Nuclear Science, Plasmas, and Electric Discharges
- Na2CO3系補助相を接合した固体電解質CO2センサのセンサ特性と界面構造
- Microstructures at/around Interface between Plasma Spray Coated Hydroxyapatite and Ti Alloy
- Effect of Substrate Bias on Si Epitaxial Growth Using Sputtering-Type Electron Cyclotron Resonance (ECR) Plasma
- Room Temperature Deposition of Silicon Nitride Films for Passivation of Organic Electroluminescence Device Using a Sputtering-Type Electron Cyclotron Resonance Plasma
- Growth of Epitaxial Silicon Film at Low Temperature by Using Sputtering-Type Electron Cyclotron Resonance Plasma
- Electrical Properties of p- and n-GaSe Doped with As and Ge
- Radiative Centers in Layer Semiconductor p-GaSe Doped with Mn
- Deposition of High-Quality Silicon Oxynitride Film at Low Temperature by Using a Sputtering-Type Electron Cyclotron Resonance Plasma