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A.f. Ioffe-institut | 論文
- Multi-Stacked InAs/InGaAs/InP Quantum Dot Laser (j_=11 A/cm^2, λ=1.9μm (77 K))
- Negative Characteristic Temperature of InGaAs Quantum Dot Injection Laser ( Quantum Dot Structures)
- High Resolution X-Ray Diffraction and Reflectivity Studies of Vertical and Lateral Ordering in Multiple Self-Organized InGaAs Quantum Dots ( Quantum Dot Structures)
- Progress in Quantum Dot Lasers : 1100 nm, 1300 nm, and High Power Applications
- Vertically Coupled Quantum Dot Lasers : First Device Oriented Structures with High Internal Quantum Efficiency ( Quantum Dot Structures)
- InGaAs/GaAs Quantum Dot Lasers with Ultrahigh Characteristic Temperature (T_0 = 385 K) Grown by Metal Organic Chemical Vapour Deposition ( Quantum Dot Structures)
- Growth and Characterization of Coherent Quantum Dots Grown by Single- and Multi-Cycle Metal-Organic Chemical Vapour Deposition ( Quantum Dot Structures)
- Progress in Quantum Dot Lasers : 1100nm, 1300nm and High Power Application
- InAs-GaAs Quantum Pyramid Lasers:In Situ Growth, Radiative Lifetimes and Polarization Properties
- InAs-GaAs Quantum Dot Lasers : in Situ Growth, Radiative Lifetimes and Polarization Properties
- Time-resolved Photoluminescence and Carrier Dynamics in Vertically-coupled Self-assembled Quantum Dots
- Self-Organized InGaAs Quantum Dots for Advanced Applications in Optoelectronics : Review Paper