Fujita Shinobu | Advanced LSI laboratory, Corporate R&D Center, Toshiba Corporation, 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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- Advanced LSI laboratory, Corporate R&D Center, Toshiba Corporation, 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japanの論文著者
Advanced LSI laboratory, Corporate R&D Center, Toshiba Corporation, 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan | 論文
- Analytical Single-Electron Transistor(SET)Model for Design and Analysis of Realistic SET Circuits
- Random Number Generator with 0.3MHz Generation Rate using Non-Stoichiometric Si_xN MOSFET
- Non-Volatile Doubly Stacked Si Dot Memory with Si Nano-Crystalline Layer
- Novel Si Quantum Memory Structure with Self-Aligned Stacked Nanocrystalline Dots
- Influence of Channel Depletion on the Carrier Charging Characteristics in Si Nanocrystal Floating Gate Memory