Nakamura Shuji | Materials and Electrical Engineering Departments, University of California, Santa Barbara, CA 93106, U.S.A.
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- Materials and Electrical Engineering Departments, University of California, Santa Barbara, CA 93106, U.S.A.の論文著者
Materials and Electrical Engineering Departments, University of California, Santa Barbara, CA 93106, U.S.A. | 論文
- High Power and High Efficiency Semipolar InGaN Light Emitting Diodes
- High Power and High External Efficiency m-Plane InGaN Light Emitting Diodes
- Effect of Substrate Miscut on the Direct Growth of Semipolar (1011) GaN on (100) MgAl_2O_4 by Metalorganic Chemical Vapor Deposition
- Equivalent-Circuit Analysis for the Electroluminescence-Efficiency Problem of InGaN/GaN Light-Emitting Diodes
- Radiative Recombination Efficiency of InGaN-Based Light-Emitting Diodes Evaluated at Various Temperatures and Injection Currents