Kando Masashi | Department of Electrical and Electronic Engineering, Shizuoka University, Hamamatsu 432-8561, Japan
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- Department of Electrical and Electronic Engineering, Shizuoka University, Hamamatsu 432-8561, Japanの論文著者
Department of Electrical and Electronic Engineering, Shizuoka University, Hamamatsu 432-8561, Japan | 論文
- Sublattice Rotation of GaP Grown on 2°-Misoriented Si Substrate Using Metalorganic Vapor Phase Epitaxy
- Transient Stimulated Brillouin Scattering in Multimode As2S3 Glass Fiber
- Transient Absorption in As2Se3 and Ag(Cu)-Doped As2Se3 Glasses Photoinduced at 1.06 μm
- Threading Dislocations in InGaAs CaP Layers with InGaAs Graded Layers Grown on Si Substrates
- High-Temperature Growth of GaP on Si Substrates by Metalorganic Vapor Phase Epitaxy