福井 健介 | 不二製油株式会社基盤研究所
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概要
論文 | ランダム
- Dependence of GaAs Ion-Implanted Layer Characteristics on Substrate Resistivity and Residual Acceptor Concentration
- Vertical Si-Metal-Oxide-Semiconductor Field Effect Transistors with Channel Lengths of 50 nm by Molecular Beam Epitaxy
- In Search of Noncritically Phase-matched Nonlinear Devices with Chalcopyrite Crystals
- Chloride Multi-Source Epitaxial Growth of CuGaS_2 and CuGaSe_2
- Aspects of Resonant Enhancement of Nonlinear Optical Properties in Silica