Ohtani Noboru | R&D Center for SiC Materials and Processes, Kwansei Gakuin University, Sanda, Hyogo 669-1337, Japan

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概要

関連著者

Kaneko Tadaaki
School Of Science And Technology Kwansei-gakuin University
Ushio Shoji
School of Science and Technology, Kwansei Gakuin University, Sanda, Hyogo 669-1337, Japan
Kutsuma Yasunori
School of Science and Technology, Kwansei Gakuin University, Sanda, Hyogo 669-1337, Japan
Yoshii Arata
School of Science and Technology, Kwansei Gakuin University, Sanda, Hyogo 669-1337, Japan
Tamai Naoto
School of Science and Technology, Kwansei Gakuin University, Sanda, Hyogo 669-1337, Japan
Ohtani Noboru
R&D Center for SiC Materials and Processes, Kwansei Gakuin University, Sanda, Hyogo 669-1337, Japan

著作論文

4H-SiC(0001) basal plane stability during the growth of epitaxial graphene on inverted-mesa structures (Selected topics in applied physics: Technology, physics, and modeling of graphene devices)

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